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 &
 Technical
Data Sheet DS 000 100 02/08 SunSource™ DC Sputtering Rates
DC SPUTTERING RATES
|
Material
|
Atoms/ion
Sputter Yield @ 400 Volts
|
Rate
Relative to Cu
|
Static
Rate
(Angstroms/Minute) Measured @ 4” Source-to-Substrate Distance
@ 70 watts/in2 DC
@ 1
Millitor
|
|
Ag
|
2.70
|
2.41
|
24,955
|
|
Al
|
0.80
|
0.69
|
7,130
|
|
Au
|
2.00
|
1.80
|
18,400
|
|
Cr
|
1.10
|
0.70
|
7,250
|
|
Cu
|
1.62
|
1.00
|
10,350
|
|
Mo
|
0.70
|
0.57
|
5,870
|
|
Pd
|
1.73
|
1.32
|
13,570
|
|
Pt
|
1.20
|
0.88
|
8,980
|
|
Doped Si
|
0.33
|
0.33
|
3,335
|
|
Ta
|
0.28
|
0.26
|
2,650
|
|
Ti
|
0.42
|
0.39
|
4,025
|
|
W
|
0.28
|
0.23
|
2,300
|
|
|
|
|
|
Notes:
- Rates
are approximately (NOT exactly!!) proportional to the power levels applied
to the target.
- Practical
maximum applied power levels are dependent upon the method of target
mounting and quality of target materials and bonding method.
- Source-to-substrate
distance and background pressure will heavily influence the actual rate of
deposition.
- Use
this chart as a guideline only. The
posted values are NOT guaranteed. Every system and process is different.
Rates @ very low power levels can be less due to smaller plasma
volume.
- The
erosion pattern of the target strongly influences actual rates.
These values are for SunSource™
sputtering sources ONLY.
- Posted
rates assume a duty cycle of 90%.
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