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Round Magnetron Sputtering Sources
 SunSource™ Round Sputtter Source Sales Brochure: MC 300 5/98
Key Features - Wide Uniform Erosion Area results in stable operation, minimal distribution & uniformity/rate changes throughout the target lifetime.
- Active Plasma Discharge on nearly entire target surface keeps target clean & reduces insulating film growth that leads to arcing.
- Argon Gas Through Cathode Body - Additional Feedthroughs, external manifolds & other plasma disturbing hardware that increases required periodic maintenance frequency is unnecessary.
- Available in 4" to 8" Diameter Targets
- Internal and Flange Mount Configurations
- Can be Used in DC, Pulsed DC, AC, RF & HIPIMS Modes.
- 35-40 Wt% Target Utilization
- Low 10-4 Torr Operation
- Fully Stoichiometeric Dielectric Materials at Low Pressures & Temperatures
- 20% Higher rates due to broad erosion area & highly efficient cooling.
- GEN II Sources offer the following improvements increasing reliability: elimination of screw insulators, Ultem replaces teflon body insulator, stainless steel water tubes with push-to-connect unions, larger diameter fasteners. Anode/ground shields, magnet module, target backing plates, target clamping ring and target size remain the same (backwards compatible).
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Argon gas flows symmetrically through the cathode bode and
uniformly across the target surface, eliminating localized high pressure
regions on the target surface. Premature target burn-through and skewed distribution are
prevented. Argon gas flowing from the target surface creates a
localized high pressure which reduces the tendency of sputtered
material to redeposit on the target surface Better Distribution Uniformity Control of pressure and flow on the target surface made possible by argon gas injection through the cathode body enables a stable plasma discharge and uniform sputtering conditions. Process asymmetries caused by poor pumping and flow conditions within the vacuum system are minimized. |
Longer Useful Target Life The profile of the eroded area remains relatively constant and does not begin to dramatically pinch as he target is consumed causing radical changes in the uniformity of the deposited films. Premature target burn-through resulting from venturi effects on the target caused by the use of gas fittings on the ground shield or separate "chimney" is avoided due to argon gas injection through the cathode body. |
| Ideal for Reactively Deposited Films The broad plasma discharge minimizes insulating film growth on the target surface which causes arcing. It also reduces redeposition of back-scattered material on the target in non-active areas. This is especially important when the redeposited material is highly stressed and likely to fracture, resulting in particulate generation and film defects. The efficient thermal design of SunSource™ sputtering sources lowers the tendency toward insulating nodular and whisker growth caused by hot spots on the target surface because the entire target assembly is uniformly cooled. | 20% Higher Rate of Deposition Compared to Competing Designs More power can be applied to the target without negative side effects such as magnet degaussing and target overheating. The 6" round SunSource™ sputtering source has a 1 gpm higher flow rate compared to the next best competing product
(5 gpm vs. 4 gpm at the same inlet and outlet pressures), resulting in 20% higher rates. The 4" round SunSource™ sputtering source can be run at continuous power levels of 7 kW (nominal 560 watts/in2) at
3 gpm compared to the next best competing source which has a maximum flow rate of 2 gpm at twice the inlet pressure. |
 
Water, power & gas connections made at atmosphere Typical GEN II Flange Mount Configuration
through bulkhead KF-50 flange on Internal Mount Sources Application Examples 
Ion-assisted reactive sputtering system for DWDM filters |
